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Specific Process Knowledge/Thin film deposition/ALD Picosun R200/ALD multilayers: Difference between revisions

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==Low temperature deposition of Al<sub>2</sub>O<sub>3</sub>==
==Low temperature deposition of Al<sub>2</sub>O<sub>3</sub>==


Recipe: Al2O3LT
<b>Recipe: Al2O3 LT</b>


Temperature:80-150 <sup>o</sup>C
<b>Temperature:80-150 <sup>o</sup>C</b>


{| border="2" cellspacing="2" cellpadding="5"  align="none"
{| border="2" cellspacing="2" cellpadding="5"  align="none"
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!Pulse time
!Pulse time
|0.1 s
|0.1 s
|0.1 s
|0.2 s
|-  
|-  
!Purge time
!Purge time
|3.0 s
|5.0 s
|4.0 s
|10.0 s
|-
|-
|}
|}


Deposition rate: <b>0.085-0.097 nm/cycle </b>(temperature dependent)
Deposition rate: <b>0.089 nm/cycle </b>(@120 <sup>o</sup>C)


==Low temperature deposition of TiO<sub>2</sub>==
==Low temperature deposition of TiO<sub>2</sub>==