Specific Process Knowledge/Lithography/DUVStepperLithography/Process Instructions: Difference between revisions
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Usually, in order to guarantee the highest fidelity of the produced pattern on the wafer the best suitable exposure dose has to be evaluated for each individual pattern, resist type and resist thickness. Thus, when a new reticle is used, it is recommended to perform an exposure dose test and - for resist thicknesses larger than 500 nm - additionally a focus offset test. After evaluation by SEM the identified dose and focus - that leads to the most accurate pattern - can be applied in the DUV process for the required wafers. | Usually, in order to guarantee the highest fidelity of the produced pattern on the wafer the best suitable exposure dose has to be evaluated for each individual pattern, resist type and resist thickness. Thus, when a new reticle is used, it is recommended to perform an exposure dose test and - for resist thicknesses larger than 500 nm - additionally a focus offset test. After evaluation by SEM the identified dose and focus - that leads to the most accurate pattern - can be applied in the DUV process for the required wafers. | ||
For complicated pattern designs or for patterns with dimensions near the resolution limit it is recommended to optimize the process window, the mask design and/ or to adapt the optical illumination system of the stepper to the desired pattern on the wafer with the help of optical simulation [[http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/DUVStepperLithography/]]. | For complicated pattern designs or for patterns with dimensions near the resolution limit it is recommended to optimize the process window, the mask design and/ or to adapt the optical illumination system of the stepper to the desired pattern on the wafer with the help of optical simulation [[http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/DUVStepperLithography//Optimization and Simulation]]. | ||
The DUV process - including BARC and resist spinning, exposure, post exposure bake and development - will be performed by the customer together with the Photolith group of Danchip. Any kind of inspection, evaluation and pre- and post-processing should be performed by the customer. | The DUV process - including BARC and resist spinning, exposure, post exposure bake and development - will be performed by the customer together with the Photolith group of Danchip. Any kind of inspection, evaluation and pre- and post-processing should be performed by the customer. | ||
Revision as of 13:39, 9 May 2016
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Process Instructions
The SÜSS Spinner-Stepper is dedicated for spinning DUV resists. Please note that a Bottom Anti-Reflective Coating (BARC) is necessary to guarantee high quality of both the resist film and the exposure. Please find the specification of the SÜSS Spinner-Stepper in the LabAdviser [Spinner-Stepper].
Usually, in order to guarantee the highest fidelity of the produced pattern on the wafer the best suitable exposure dose has to be evaluated for each individual pattern, resist type and resist thickness. Thus, when a new reticle is used, it is recommended to perform an exposure dose test and - for resist thicknesses larger than 500 nm - additionally a focus offset test. After evaluation by SEM the identified dose and focus - that leads to the most accurate pattern - can be applied in the DUV process for the required wafers.
For complicated pattern designs or for patterns with dimensions near the resolution limit it is recommended to optimize the process window, the mask design and/ or to adapt the optical illumination system of the stepper to the desired pattern on the wafer with the help of optical simulation [and Simulation].
The DUV process - including BARC and resist spinning, exposure, post exposure bake and development - will be performed by the customer together with the Photolith group of Danchip. Any kind of inspection, evaluation and pre- and post-processing should be performed by the customer.