Specific Process Knowledge/Characterization/SEM Supra 3

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The SEM Supra 3 located in cleanroom C-1

SEM Supra 3

The SEM Supra 3 a scanning electron microscope. It produces enlarged images of a variety of specimens, achieving magnifications of over 500.000x providing ultra high resolution imaging. This important and widely used analytical tool provides exceptional resolution and depth of field and requires minimal specimen preparation.

The SEM is a VP (variable pressure) instrument - Indicating that it is capable of operating at variable pressure. By increasing the pressure in the chamber it is possible to image isolating samples. The higher density of gas molecules will eliminate the charges at the cost of slightly reduced resolution. Also, the Se2 and InLens detectors will no longer work.

This SEM is equipped with a HDAsB (High Definition four quadrant Angular Selective Backscattered electron) detector. This detector is sitting at the end of the column where the final cap is placed in the other SEMs. To avoid collision between the HDAsB detector and samples/sample holders, a set of rules have been introduced on the SEM Supra 3 that most importantly implies that the sample holder and the sample dimensions have to be noted in the software.

The SEM Supra 3 is located in the cleanroom. It was installed in September 2015.

The user manual, control instruction, the user APV and contact information can be found in LabManager:

SEM Supra 3 info page in LabManager,

Performance information

• SEM comparison page

Equipment performance

Equipment		SEM Supra 3 (Supra 40VP SEM)
Purpose	Imaging and measurement of	Conducting samples Semi-conducting samples Thin (~ 5 µm <) layers of non-conducting materials such as polymers Thick polymers, glass or quartz samples
Location		Cleanroom of DTU Danchip
Performance	Resolution	1-2 nm (limited by vibrations) The resolution is strongly dependent on the type of sample and the skills of the operator.
Instrument specifics	Detectors	Secondary electron (Se2) Inlens secondary electron (Inlens) High Definition four quadrant Angular Selective Backscattered electron detector (HDAsB) Variable pressure secondary electron (VPSE)
	Stage	X, Y: 130 × 130 mm T: -4 to 70o R: 360o Z: 50 mm
	Electron source	FEG (Field Emission Gun) source
	Operating pressures	Fixed at High vacuum (2 × 10-4mbar - 10-6mbar) Variable at Low vacuum (0.1 mbar - 2 mbar)
	Options	High Definition four quadrant Angular Selective Backscattered electron detector (HDAsB)
Substrates	Batch size	Up to 6" wafer with full view
	Allowed materials	Any standard cleanroom material