Specific Process Knowledge/Thin film deposition/ALD Picosun R200: Difference between revisions
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*Al<sub>2</sub>O<sub>3</sub>: 150 - 350 <sup>o</sup>C | *Al<sub>2</sub>O<sub>3</sub>: 150 - 350 <sup>o</sup>C | ||
*TiO<sub>2</sub>: | *TiO<sub>2</sub>: 150-350 <sup>o</sup>C | ||
*Pt: ? | *Pt: ? | ||
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|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
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*1 200 mm wafer | |||
*1-5 100 mm wafers | *1-5 100 mm wafers | ||
*1-5 150 mm wafers | *1-5 150 mm wafers | ||