Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By Peixiong: Difference between revisions
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=With C4F8 and H2 chemistry= | =With C4F8 and H2 chemistry= | ||
==Part 1== | |||
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==Part2== | |||
=With CF4 and H2 chemistry= | =With CF4 and H2 chemistry= |
Revision as of 15:02, 2 May 2016
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THIS PAGE IS UNDER CONSTRUCTION
With C4F8 and H2 chemistry
Part 1
Very good |
Very good |
Very good |
Very good |
Very good |
Very good |
Unstable plasma at 2mtorr |
stable plasma at 2.5mtorr |
stable plasma at 2.5mtorr | ||
ICP metal etch SiO2 by reist mask try |
Date |
Feb262013 |
Feb272013 |
Feb272013 20:00 |
Feb272013 23:00 |
Feb282013 1am |
Feb282013 2am |
Feb282013 2am |
Feb282013 2am |
Feb2820134am |
Metal ICP recipe |
pxSiO2try5 |
pxSiO2try6 |
pxSiO2try7 |
pxSiO2try8 |
pxSiO2try8 |
pxSiO2try8 |
pxSiO2try9 |
pxSiO2try9 |
pxSiO2try9 | |
Wafer size and ID |
6inch, 6A1_feb252013 |
6inch, 6A4_feb262013 |
6inch, 6A6_feb262013 |
6inch, 6A2_feb272013 |
6inch, 6A3_feb272013 |
6inch, 6A4_feb272013 |
6inch, 6A5_feb272013 |
6inch, 6A5_feb272013 |
6inch, 6A6_feb272013 | |
Mask |
440nm resist on 62nmBarc on 1800nm apox, first etch barc 20sec by Ox plasma |
440nm resist on 62nmBarc on 1800nm apox, first etch barc 20sec by Ox plasma |
780nm resist on 62nmBarc on 1800nm apox, first etch barc 20sec by Ox plasma |
780nm resist on 62nmBarc on 800nm apox, first etch barc 20sec by Ox plasma |
780nm resist on 62nmBarc on 490nm apox, first etch barc 20sec by Ox plasma |
Blank Si |
780nm resist on 62nmBarc on 490nm apox, first etch barc 20sec by Ox plasma |
780nm resist on 62nmBarc on 490nm apox, first etch barc 20sec by Ox plasma |
780nm resist on 62nmBarc on 490nm apox, first etch barc 20sec by Ox plasma | |
Etch time |
2min |
4min |
4min |
4min |
5min |
4min |
1min |
4min |
5min | |
Pressure [mTorr] |
6 |
6 |
4 |
3 |
3 |
2 |
2 |
2.5 |
2.5 | |
C4F8 flow [sccm] |
0 |
20 |
10 |
8 |
8 |
8 |
8 |
8 |
8 | |
CF4 flow [sccm] |
40 |
0 |
0 |
0 |
0 |
0 |
0 |
0 |
0 | |
H2 flow [sccm] |
30 |
20 |
30 |
30 |
30 |
30 |
30 |
30 |
30 | |
CH4 flow [sccm] |
0 |
Set 20 real 3.7 |
Set 20 real 3.7 |
0 |
0 |
0 |
0 |
0 |
0 | |
Coil Power [W] |
800 |
800 |
800 |
800 |
800 |
800 |
800 |
800 reflect 13W |
800 reflect 8W | |
Platen Power [W] |
100 |
100 |
120 |
150 |
150 |
150 |
150 |
150 |
150reflect 0.2w | |
Platen temperature [oC] |
20 |
20 |
20 |
20 |
20 |
20 |
20 |
20 |
20 | |
Coil match |
60%,27% |
63%,25% |
63%,25% |
67%,24% |
67%,24% |
68.9%,24.1% |
68.9%,24.1% |
68.7%,25.3% |
68.87%,23.1% | |
Platen Match |
40%,53% |
36%,54% |
36%,54% |
34%,54% |
34%,54% |
34.3%,53.8% |
34.3%,53.8% |
36.8%,54.9% |
33.0%,54.4% | |
Throde valve opening rate |
17% |
12% |
14% |
14.7% |
14.7% |
14.7% |
14.7% |
16.2% |
||
Comments |
Profile Very good, 2min etch SiO3 350nm in wafer center, 310nm in wafer, resist etched 260nm |
Profile Very good, 2min etch SiO3 350nm in wafer center, 310nm in wafer, resist etched 260nm |
Profile Very good, 4min etch SiO3 480nm in wafer center, Resist etched 100nm |
Profile Very good, 4min etch SiO3 480nm in wafer center, Resist etched 100nm, side wall 85degree |
Profile Very good, 4min etch SiO3 480nm in wafer center, Resist etched 100nm |
Plasma very stable on blank Si wafer |
Plasma not stable in apox wafer |
etched 500nm apox, resit 150n, slide wall 86degm |
Part2
With CF4 and H2 chemistry
Part 1
bad |
bad |
bad |
bad |
bad |
|
Date |
Feb122013 |
Feb122013 |
Feb122013 |
Feb122013 |
Feb122013 |
Metal ICP recipe |
pxSiO2try1 |
pxSiO2try1 |
pxSiO2try1 |
pxSiO2try2 |
pxSiO2try2 |
Wafer size and ID |
6inch 6A |
6inch 6A1_feb112013 |
6inch, 6A2_feb112013 |
6inch, 6A3_feb112013 |
6inch, 6A4_feb112013 |
Mask |
Blank Si dummy test |
Blank apox, 3539nm |
Blank KRF 347.9nm |
Blank KRF 345nm |
Blank apox 4623m |
Etch time |
2min |
2min |
1min |
1min |
1min |
Pressure [mTorr] |
8 |
8 |
8 |
20 |
20 |
C4F8 flow [sccm] |
20 |
20 |
20 |
20 |
|
CF4 flow [sccm] |
40 |
40 |
40 |
40 |
40 |
H2 flow [sccm] |
20 |
20 |
20 |
20 |
20 |
Coil Power [W] |
800 |
800 |
800 |
800 |
800 |
Platen Power [W] |
200 |
200 |
200 |
200 |
200 |
Platen temperature [oC] |
20 |
20 |
20 |
20 |
20 |
Coil match |
59%, 27% |
59%, 27% |
59%, 27% |
48%, 29% |
48%, 29% |
Platen Match |
45%, 56% |
45%, 56% |
45%, 56% |
52%, 60% |
52%, 60% |
Throde valve opening rate |
16% |
16% |
16% |
10.7% |
10.7% |
Etch rate |
µm/min |
Wf center 238µm/min Wafer edge 230nm/min |
Wafer center 170.5nm/min 1cm from wf edge , 204.1nm/min |
Wf center 80.4µm/min Wafer edge 119.6nm/min |
Wafer center 128.26nm/min, 1cm from wafer edge 123.09nm/min |
Distance from wf cent (mm) |
Seletivity at cent |
||||
Remaining APOX thickness nm |
Wf center 3062nm 1cm from wf edge: 3079nm |
Wf center nm |
Too much polymer in sem |
||
Comments |
Part 2
bad |
bad |
bad |
Very good |
||
ICP metal etch SiO2 by reist mask try |
Date |
Feb252013 |
Feb252013 |
Feb262013 |
|
Metal ICP recipe |
pxSiO2try3 |
pxSiO2try4 |
pxSiO2try5 |
||
Wafer size and ID |
6inch, 6A1_feb252013 |
6inch, 6A6_feb252013 |
6inch, 6A1_feb252013 |
||
Mask |
980nm resist resist on 62nmBarc on 1190nm apox |
780nm resist on 62nmBarc on 492nm apox, first etch barc 20sec by Ox plasma |
440nm resist on 62nmBarc on 1800nm apox, first etch barc 20sec by Ox plasma |
||
Etch time |
3min |
3min |
2min |
||
Pressure [mTorr] |
15 |
8 |
6 |
||
C4F8 flow [sccm] |
0 |
0 |
0 |
||
CF4 flow [sccm] |
40 |
40 |
40 |
||
H2 flow [sccm] |
30 |
30 |
30 |
||
Coil Power [W] |
800 |
800 |
800 |
||
Platen Power [W] |
200 |
200 |
100 |
||
Platen temperature [oC] |
20 |
20 |
20 |
||
Coil match |
50%, 30% |
59%, 27% |
60%,27% |
||
Platen Match |
50%, 57% |
44%, 56% |
40%,53% |
||
Throde valve opening rate |
10% |
13.6% |
17% |
||
Images |
Images 2 |
||||
Comments |
Apox etch 550nm for 3min, side wall angle 71degree |
Too much polymer, etch Si too much Etch through 500nm apox, then etch Si 180nm, |
Profile Very good, 2min etch SiO3 350nm in wafer center, 310nm in wafer, resist etched 260nm |
Low pressure gives better profile, less polymer, however, CF4 etch Si too quick |