Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By Peixiong

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With CF4 and H2 chemistry

Part 1

	bad	bad	bad	bad	bad
Date	Feb122013	Feb122013	Feb122013	Feb122013	Feb122013
Metal ICP  recipe	pxSiO2try1	pxSiO2try1	pxSiO2try1	pxSiO2try2	pxSiO2try2
Wafer size and ID	6inch 6A	6inch 6A1_feb112013	6inch, 6A2_feb112013	6inch, 6A3_feb112013	6inch, 6A4_feb112013
Mask	Blank Si dummy test	Blank apox, 3539nm	Blank KRF 347.9nm	Blank KRF 345nm	Blank  apox 4623m
Etch time	2min	2min	1min	1min	1min
Pressure [mTorr]	8	8	8	20	20
C4F8 flow [sccm]		20	20	20	20
CF4 flow [sccm]	40	40	40	40	40
H2 flow [sccm]	20	20	20	20	20
Coil Power [W]	800	800	800	800	800
Platen Power [W]	200	200	200	200	200
Platen temperature [oC]	20	20	20	20	20
Coil match	59%, 27%	59%, 27%	59%, 27%	48%, 29%	48%, 29%
Platen Match	45%, 56%	45%, 56%	45%, 56%	52%, 60%	52%, 60%
Throde valve opening rate	16%	16%	16%	10.7%	10.7%
Etch rate	µm/min	Wf center  238µm/min Wafer  edge  230nm/min	Wafer center 170.5nm/min 1cm from wf edge , 204.1nm/min	Wf center  80.4µm/min Wafer  edge  119.6nm/min	Wafer center 128.26nm/min, 1cm from wafer  edge 123.09nm/min
Distance from wf cent (mm)					Seletivity at cent
Remaining APOX thickness nm		Wf center 3062nm 1cm from wf edge: 3079nm	Wf center nm		Too much polymer in sem
Comments

 

Part 2

	bad	bad	bad	Very good
ICP metal etch SiO2 by reist mask try	Date	Feb252013	Feb252013	Feb262013
	Metal ICP  recipe	pxSiO2try3	pxSiO2try4	pxSiO2try5
	Wafer size and ID	6inch, 6A1_feb252013	6inch, 6A6_feb252013	6inch, 6A1_feb252013
	Mask	980nm resist resist on 62nmBarc on 1190nm apox	780nm resist on 62nmBarc on 492nm apox, first etch barc 20sec by Ox plasma	440nm resist on 62nmBarc on 1800nm apox, first etch barc 20sec by Ox plasma
	Etch time	3min	3min	2min
	Pressure [mTorr]	15	8	6
	C4F8 flow [sccm]	0	0	0
	CF4 flow [sccm]	40	40	40
	H2 flow [sccm]	30	30	30
	Coil Power [W]	800	800	800
	Platen Power [W]	200	200	100
	Platen temperature [oC]	20	20	20
	Coil match	50%, 30%	59%, 27%	60%,27%
	Platen Match	50%, 57%	44%, 56%	40%,53%
	Throde valve opening rate	10%	13.6%	17%
	Images		Images 2	Images 3	Images 4
	Comments	Apox etch 550nm for 3min, side wall angle 71degree	Too much polymer, etch Si too much Etch through 500nm apox, then etch Si 180nm,	Profile Very good, 2min etch SiO3 350nm in wafer center, 310nm in wafer, resist etched 260nm	Low pressure gives better profile, less polymer, however, CF4 etch Si too quick