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The user manuals, quality control procedures and results, user APVs, technical information and contact information can be found in LabManager:

SEM's at DTU Danchip:

Equipment performance and process related parameters

Equipment		SEM Supra 3 (Supra 40VP SEM)
Purpose	Imaging and measurement of	Any sample except bulk insulators such as polymers, glass or quartz wafers
Location		Cleanroom of DTU Danchip
Performance	Resolution	1-2 nm (limited by vibrations) The resolution is strongly dependent on the type of sample and the skills of the operator.
Instrument specifics	Detectors	Secondary electron (Se2) Inlens secondary electron (Inlens) High Definition four quadrant Angular Selective Backscattered electron detector (HDAsB) Variable pressure secondary electron (VPSE)
	Stage	X, Y: 130 × 130 mm T: -4 to 70^o R: 360^o Z: 50 mm
	Electron source	FEG (Field Emission Gun) source
	Operating pressures	Fixed at High vacuum (2 × 10^-4mbar - 10^-6mbar) Variable at Low vacuum (0.1 mbar - 2 mbar)
	Options	High Definition four quadrant Angular Selective Backscattered electron detector (HDAsB)
Substrates	Batch size	Up to 6" wafer with full view
	Allowed materials	Any standard cleanroom material

@@ Line 22: / Line 22: @@
 !colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
-|style="background:WhiteSmoke; color:black"|<b>SEM Supra 2 (Supra 60VP SEM)</b>
+|style="background:WhiteSmoke; color:black"|<b>SEM Supra 3 (Supra 40VP SEM)</b>
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="1"|Purpose
@@ Line 45: / Line 45: @@
 *Secondary electron (Se2)
 *Inlens secondary electron (Inlens)
-*4 Quadrant Backscatter electron (QBSD)
+*High Definition four quadrant Angular Selective Backscattered electron detector (HDAsB)
 *Variable pressure secondary electron (VPSE)
 |-
 |style="background:LightGrey; color:black"|Stage
 |style="background:WhiteSmoke; color:black"|
-*X, Y: 150 &times; 150 mm
+*X, Y: 130 &times; 130 mm
-*T: -10 to 70<sup>o</sup>
+*T: -4 to 70<sup>o</sup>
 *R: 360<sup>o</sup>
 *Z: 50 mm
@@ Line 66: / Line 66: @@
 |style="background:LightGrey; color:black"|Options
 |style="background:WhiteSmoke; color:black"|
-*Antivibration platform
+*High Definition four quadrant Angular Selective Backscattered electron detector (HDAsB)
-*Fjeld M-200 airlock taking up to 8" wafers
-*Oxford Instruments X-Max<sup>N</sup> 50 mm<sup>2</sup> SDD EDX detector and AZtec software package
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*Up to 8" wafer with 6" view
+*Up to 6" wafer with full view
 |-
 | style="background:LightGrey; color:black"|Allowed materials