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Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions

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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,315 edits
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<gallery widths="200px" heights="150px" perrow="3">  
<gallery widths="200px" heights="150px" perrow="3">  
image:250uc_lable_T0d_534.jpg|280µc is not enough to go through 560nm thick zep520A
image:250uc_lable_T0d_534.jpg|Top view of resist after etch
image:320uc_line400nm_cent_T0d_524.jpg|320µC line 400nm
image:320uc_line400nm_cent_T0d_524.jpg|large sidewal roughness
image:px1283mk_T30deg_506.jpg|Tilt 30 deg.
image:px1283mk_T30deg_506.jpg|Tilt 30 deg.
  </gallery>
  </gallery>
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