Jump to content

Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions

Bghe (talk | contribs)
Bghe (talk | contribs)
Line 211: Line 211:
|SEM profile images
|SEM profile images
|NONE
|NONE
|-
 
|Etch rate in nLOF resist
|1.6µm was removed after 10min
|-
|Comment
|After 10min etch the resist was gone and the etch depth as 1.145µm in the oxide
|-
|-
|}
|}