Specific Process Knowledge/Wafer and sample drying: Difference between revisions
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''If'' rinsing is used as well, the standard process is 60 seconds of rinse at 500 RPM, followed by 120/180 seconds of drying at 2000 RPM. | ''If'' rinsing is used as well, the standard process is 60 seconds of rinse at 500 RPM, followed by 120/180 seconds of drying at 2000 RPM. | ||
<gallery caption="Different places to dry your wafers" widths="275px" heights="225px" perrow=" | <gallery caption="Different places to dry your wafers" widths="275px" heights="225px" perrow="5"> | ||
image:Spin_dryer_1.jpg|Spin dryer 1 for 4 " wafers in C-1. | image:Spin_dryer_1.jpg|Spin dryer 1 for 4 " wafers in C-1. | ||
image:Spin_dryer_2ny.jpg|Spin dryer 2 for RCA cleaned wafers only in B-1. Can take 4" wafers (top) and 6" wafers (bottom). | image:Spin_dryer_2ny.jpg|Spin dryer 2 for RCA cleaned wafers only in B-1. Can take 4" wafers (top) and 6" wafers (bottom). | ||