Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions

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At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the PECVD page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.

Recipes on PECVD2 for deposition of silicon nitride and silicon oxynitride

Recipes

Recipe name	SiH4 flow [sccm]	NH3 flow [sccm]	N2 flow [sccm]	Pressure [mTorr]	Power [W]	Description
SINSTD80	30	20	1000	500	80
SINSTD96	30	20	1000	500	96
1SiN	40	20	1000	700	150

Expected results

Recipe name	Deposition rate [nm/min]	RI	Uniformity [%]	Stress [MPa]	BHF etch rate [Å/min]	Comments
1SiN	Deposition rate in the middle of two wafers: 49nm/min+-1nm/min (2015-04-24 BGHE) In the middel: 72.6-76.4 nm/min (2014-08-13 BGHE) Old shower head Variation over 3 wafers: 71.4-78.6 nm/min (2014-08-13 BGHE) Old shower head		~2-4% (2015-04-24 BGHE) ~5% in the middel (4") (2014-08-13 BGHE) Old shower head ~10% over 3 wafers (2014-08-13 BGHE) Old shower head
SINSTD80	68nm/min (2014-07-07 JML)
SINSTD96

Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride

Quality Controle (QC) for PECVD3

QC Recipe:	QCNITRIDE
SiH₄ flow	30 sccm
NH₃ flow	30 sccm
N₂ flow	1470 sccm
Pressure	845 mTorr
RF-power	HF: 100 W 7.8s LF: 100 W 2.2s

QC limits	PECVD3
Depoition rate	10.4 - 13.0 nm/min
Non-uniformity	<2.0 %
Refractive Index	1.909 - 2.028

Recipes

Recipe name	SiH4 flow [sccm]	NH3 flow [sccm]	N2 flow [sccm]	Pressure [mTorr]	Power [W]	Description
MFSiNLS2	30	30	1470	845	100HF 7.8s 100LF 2.2s	Low stress nitride - standard recipe. The latest measured values can be seen in the process control sheet in LabManager.
MFSiNLS	30	30	1470	650	20HF 6s 30LF 2s	Low stress nitride - old standard recipe. This one is not running well any more.
LFSiN	30	15	1470	550	60LF	Compressive stress
HFSiN	30	42	1470	900	20HF	Tensile stress

LF=Low Frequency HF=High Frequency MF=Mixed Frequency SiN=Silicon Nitride LS=Low Stress

Expected results

Recipe name	Deposition rate [Å/min]	RI	Uniformity [%] [Std./mean]	Stress [MPa]	KOH etch rate [Å/min]	BHF etch rate [Å/min]	See more
MFSiNLS2	~422 (bghe Feb 2016)	~2.03	~2	~6 (bghe Feb 2016)	~2.1 (bghe Feb 2016)	~?	see DOE
MFSiNLS	~107	~1.99	~4	~-30	~2.5	~250	.
LFSiN	~550	~1.96	~3	~-630	.	.	.
HFSiN	~130	~1.97	~2	~460	.	.	.

Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride. Expired!:PECVD1 has been decommissioned

Recipes

Recipe name	SiH4 flow [sccm]	NH3 flow [sccm]	N2 flow [sccm]	Pressure [mTorr]	Power [W]	Description
1nitride	30	20	1000	500	80
1nit_std	40	20	1960	550	60	Process control recipe

Expected results

Recipe name	Deposition rate [nm/min]	RI	Uniformity [%]	Stress [MPa]	BHF etch rate [Å/min]	Comments
1nitride
1nit_std	~32	1.89	~1		~700	The latest measured values can be seen in the process control sheet in LabManager

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 |RF-power
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-*LF: 100 W 7.8s
+*HF: 100 W 7.8s
-*HF: 100 W 2.2s
+*LF: 100 W 2.2s
 |-
 |}