Specific Process Knowledge/Characterization: Difference between revisions
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*[[Specific Process Knowledge/III-V Process/characterisation/III-V ECV-profiler|Carrier density (doping) profiler]] | *[[Specific Process Knowledge/III-V Process/characterisation/III-V ECV-profiler|Carrier density (doping) profiler]] | ||
*[[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|Scanning Electron Microscopy]] | *[[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|Scanning Electron Microscopy]] | ||
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*[[/Other electrical measurements|Other electrical measurements]] | *[[/Other electrical measurements|Other electrical measurements]] | ||
Revision as of 08:22, 22 June 2016
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Choose characterization topic
- Element analysis
- Measurement of film thickness and optical constants
- Photoluminescence mapping
- Sample imaging
- Sample preparation for inspection
- Stress measurement
- Wafer thickness measurement
- Topographic measurement
- Contact angle measurement
- Four-Point Probe (Resistivity measurement)
- Carrier density (doping) profiler
- Scanning Electron Microscopy
Choose equipment
AFM
Element analysis
Optical and stylus profilers
Optical microscopes
Optical characterization
- Ellipsometer
- Filmtek 4000
- Prism Coupler
- PL mapper - Photoluminescence mapper
- Lifetime scanner MDPmap
SEM's at CEN
- FIB-SEM FEI QUANTA 200 3D
- Dual Beam FEI Helios Nanolab 600
- SEM FEI Nova 600 NanoSEM
- SEM FEI Quanta 200 ESEM FEG
- SEM Inspect S
SEM's at Danchip
TEM's at CEN
Various