Specific Process Knowledge/Lithography/UVLithography: Difference between revisions
| Line 126: | Line 126: | ||
|High selectivity for dry etch. | |High selectivity for dry etch. | ||
Resist thickness 1 - | Resist thickness 1 - 4 µm. | ||
|[[media:AZ_MiR_701.pdf|AZ_MiR_701.pdf]] | |[[media:AZ_MiR_701.pdf|AZ_MiR_701.pdf]] | ||
|[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV|Spin Coater: Gamma UV]], | |[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV|Spin Coater: Gamma UV]], | ||
| Line 153: | Line 153: | ||
|Negative sidewalls for lift-off. | |Negative sidewalls for lift-off. | ||
Resist thickness 1.5 - | Resist thickness 1.5 - 5 µm. | ||
|[[media:AZ_nLOF_2020.pdf|AZ_nLOF_2020.pdf]] | |[[media:AZ_nLOF_2020.pdf|AZ_nLOF_2020.pdf]] | ||
|[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV|Spin Coater: Gamma UV]]; | |[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV|Spin Coater: Gamma UV]]; | ||