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After etching each wafer is cleaved in two places: Both cleavage lines run across the [[Specific Process Knowledge/Photolithography/masks/travka/fields/Aline| A-line fields]]. This produces three sites on each wafer where the depth of the trenches can be determined using an SEM.
After etching each wafer is cleaved in two places: Both cleavage lines run across the [[Specific Process Knowledge/Pattern Design/Travka/fields/Aline|A-line fields]]. This produces three sites on each wafer where the depth of the trenches can be determined using an SEM.




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