Specific Process Knowledge/Wafer cleaning/RCA: Difference between revisions
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|'''General description''' | |'''General description''' | ||
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Used for removal of light organics, particles and desorption of trace metals (Au, Ag, Ni, Cd, Zn, Co, Cr, etc). | |||
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Used for removal of alkali ions, metal hydroxides (of Al, Fe, Mg, Zn) and residual trace metals (e.g. Cu and Au). | |||
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It is used for removal of oxide generated in RCA1 and RCA2 | It is used for removal of oxide generated in RCA1 and RCA2 | ||