Specific Process Knowledge/Wafer cleaning/RCA: Difference between revisions
Line 29: | Line 29: | ||
|'''General description''' | |'''General description''' | ||
| | | | ||
Used for removal of light organics, particles and desorption of trace metals (Au, Ag, Ni, Cd, Zn, Co, Cr, etc). | |||
| | | | ||
Used for removal of alkali ions, metal hydroxides (of Al, Fe, Mg, Zn) and residual trace metals (e.g. Cu and Au). | |||
| | | | ||
It is used for removal of oxide generated in RCA1 and RCA2 | It is used for removal of oxide generated in RCA1 and RCA2 |
Revision as of 11:28, 6 March 2008
RCA cleaning
The RCA clean is used for cleaning the wafers before taking them into the furnaces and a few other equipments (check the cross contamination sheet). It consists of two solutions: RCA1 and RCA2 plus diluted HF. A crucial part of the RCA clean is the oxidation by HO. Therefore the life time of the RCA solutions are limited by the presence of the HO which is highly volatile at 70 oC.
- The RCA1 contains: HO, NHOH and HO (5:1:1). It is used for removal of light organics, particles and metal.
- The RCA2 contains: HO, HCl and HO (5:1:1). It is used for removal of heavy metals, alkalies and metal hydroxides.
RCA procedure
- RCA1: 10 min
- DI water rinsing (dumping three times)
- HF: 30 sec (avoid it if you have oxide as the top layer)
- DI water rinsing (dumping three times)
- RCA2: 10 min
- DI water rinsing (dumping three times)
- Optional: HF: 30 sec (avoid it if you have oxide as the top layer)
- DI water rinsing (dumping three times)
For procedure details please look in the user manual positioned in LabManager.
Overview of RCA process data
RCA1 | RCA2 | HF | |
---|---|---|---|
General description |
Used for removal of light organics, particles and desorption of trace metals (Au, Ag, Ni, Cd, Zn, Co, Cr, etc). |
Used for removal of alkali ions, metal hydroxides (of Al, Fe, Mg, Zn) and residual trace metals (e.g. Cu and Au). |
It is used for removal of oxide generated in RCA1 and RCA2 |
Chemical solution | HO, NHOH(29%) and HO(30%) (5:1:1) | HO, HCl(37%) and HO(30%) (5:1:1) | 5% HF |
Process temperature | 70-80 oC | 70-80 oC | Room temperature |
Process time |
10 min. |
10 min. |
30 sec. |
Life time of the chemical solutions | Can only be heated one time. When hot: it lasts for ~1h | Can only be heated one time. When hot: it lasts for ~1h | ~2 months |
Allowed materials |
|
|
|
Batch size |
1-25 2",4" or 6" wafers at a time |
1-25 2",4" or 6" wafers at a time |
1-25 2",4" or 6" wafers at a time |
Size of substrate |
4"-6" wafers |
4"-6" wafers |
4"-6" wafers |