Specific Process Knowledge/Pattern Design: Difference between revisions
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**Please notice that if you plan to use the automatic alignment option the alignment marks must be displaced from y=0 to y=+/- 1,6mm. | **Please notice that if you plan to use the automatic alignment option the alignment marks must be displaced from y=0 to y=+/- 1,6mm. | ||
=== Alignment marks for E-beam lithography === | |||
If your UV mask is used to define wafers marks in e-beam lithography with JEOL JBX-9500, you should design your alignment marks in a way the JEOL JBX-9500 recognizes. Please follow the guide [http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/EBeamLithography/JEOL_JBX-9500FSZ#Design_of_global_marks_and_chip_marks here]. | If your UV mask is used to define wafers marks in e-beam lithography with JEOL JBX-9500, you should design your alignment marks in a way the JEOL JBX-9500 recognizes. Please follow the guide [http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/EBeamLithography/JEOL_JBX-9500FSZ#Design_of_global_marks_and_chip_marks here]. | ||