Specific Process Knowledge/Lithography: Difference between revisions
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*4 small samples (20mm, 12mm, 8mm, 4mm) | *4 small samples (20mm, 12mm, 8mm, 4mm) | ||
*6 wafers of 50 mm in size | *6 wafers of 50 mm in size | ||
* | *3 wafers of 100 mm in size | ||
*1 wafer of 150 mm in size | *1 wafer of 150 mm in size | ||
Only one cassette can be loaded at time | Only one cassette can be loaded at time | ||
Revision as of 09:52, 1 March 2016
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Comparing lithography methods at DTU Danchip
| UV Lithography | DUV Stepper Lithography | E-beam Lithography | Nano Imprint Lithography | 2-Photon Polymerization Lithography 
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| Generel description | Pattern transfer via UltraViolet (UV) light | Pattern transfer via DeepUltraViolet (DUV) light | Patterning by electron beam | Pattern transfer via hot embossing(HE) | Direct writing via IR laser |
| Pattern size range |
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| Resist type |
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| Resist thickness range |
~0.5µm to 20µm |
~50nm to 2µm |
~30nm to 0.5 µm |
~ 100nm to 2µm |
droplet or coating |
| Typical exposure time |
2s-30s pr. wafer |
Process depended, depends on pattern, pattern area and dose |
Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I |
Process depended, depends also on heating and cooling temperature rates |
Process depended, depends on pattern and dose |
| Substrate size |
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We have cassettes that fit to
Only one cassette can be loaded at time |
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| Allowed materials |
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Equipment Pages
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3D Lithography | ||
Knowledge and Information about Lithography
THIS SECTION IS UNDER CONSTRUCTION
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Literature
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UV Exposure
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Development
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