Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using LPCVD TEOS: Difference between revisions
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[[Image:teos1.jpg|300x300px|thumb|Figure 1: TEOS structure]] | [[Image:teos1.jpg|300x300px|thumb|Figure 1: TEOS structure]] | ||
[[Image:teos2.JPG|300x300px|thumb|Figure 2: TEOS deposited in a trench etched in Silicon]] | [[Image:teos2.JPG|300x300px|thumb|Figure 2: TEOS deposited in a trench etched in Silicon]] | ||
There is one | There is one LPCVD furnace for deposition of TEOS at Danchip. The furnace was installed in 1995 and can handle 4" wafers. | ||
TEOS is Tetra-Ethyl-Ortho-Silicate, it is also sometimes referred to as Tetra-Ethoxy-Silane. The difference between TEOS and Silane is essentially that is TEOS the silicon atom is already oxidised. Therefore the conversion of TEOS to Silicon dioxide is a rearrangement rather than an oxidation. As can be seen from figure 1 what is basically required to deposit Silicon dioxide is a removal of two oxygen atoms for that a relative high temperature of 725 <sup>o</sup>C. | TEOS is Tetra-Ethyl-Ortho-Silicate, it is also sometimes referred to as Tetra-Ethoxy-Silane. The difference between TEOS and Silane is essentially that is TEOS the silicon atom is already oxidised. Therefore the conversion of TEOS to Silicon dioxide is a rearrangement rather than an oxidation. As can be seen from figure 1 what is basically required to deposit Silicon dioxide is a removal of two oxygen atoms for that a relative high temperature of 725 <sup>o</sup>C. | ||