Specific Process Knowledge/Etch/KOH Etch: Difference between revisions
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*Thermal SiO<math>_2</math> | *Thermal SiO<math>_2</math> | ||
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|'''Etch rate''' | |'''Etch rate in Si''' | ||
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*~0.4 µm/min (60 <sup>o</sup>C) | *~0.4 µm/min (60 <sup>o</sup>C) | ||
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:in p<sup>++</sup> (doping level > 5x10<sup>19</sup> cm<sup>-3</sup>) | :in p<sup>++</sup> (doping level > 5x10<sup>19</sup> cm<sup>-3</sup>) | ||
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|'''Etch rate in SiO<math>_2</math>''' | |||
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:~7nm/min@80 <sup>o</sup>C | |||
|. | |||
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|'''Roughness''' | |'''Roughness''' | ||
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<br clear="all" /> | <br clear="all" /> | ||
===Definition of structures=== | ===Definition of structures=== | ||