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Specific Process Knowledge/Thin film deposition/Deposition of Gold: Difference between revisions

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== Adhesion of Au on Si ==
== Adhesion of Au on Si ==
The adhesion of Au on Si is not very good, and an adhesion layer is often deposited on the wafer, before the Au layer evaporated. A good metal to use as adhesionlayer is Ti, but Cr is also often used.  
The adhesion of gold on Silicon or Silicon with native oxide is not very good. The Si substrate is often deposited an adhesion layer before the gold deposition. A few nm of Chromium or Titanium works well and they react with the Oxygen of Silicon oxide and present a metallic bond with gold. 5 nm to 10 nm thick of Cr or Ti is commonly used and it is important to deposit Cr or Ti and then immediately Au. If the vacuum chamber is opened in between, the surface of Cr or Ti will get oxidized and that will give a poor adhesion. If a gold layer needs to be deposited directly on Silicon, then native oxide has to be removed by deep in diluted HF and immediately load the evaporation chamber. And after the deposition, the wafer has to be heated op to get some Au-Si diffusion which improves the adhesion.
The most commonly used thickness of the Ti adhesionlayer is 10 nm. Also thinner layers, for example 5 nm, can be used.
 


{| border="1" cellspacing="0" cellpadding="4"  
{| border="1" cellspacing="0" cellpadding="4"