Specific Process Knowledge/Etch/III-V ICP/SiO2: Difference between revisions
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| | |Tested on a plane BPSG layer. The etch rate is much lower for an etch time of e.g. 5s | ||
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Bghe (talk | contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators 7,317 edits No edit summary |
Bghe (talk | contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators 7,317 edits |
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| Line 54: | Line 54: | ||
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|Comment | |Comment | ||
| | |Tested on a plane BPSG layer. The etch rate is much lower for an etch time of e.g. 5s | ||
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|} | |} | ||