Specific Process Knowledge/Etch/III-V ICP/SiO2: Difference between revisions
No edit summary |
|||
| Line 2: | Line 2: | ||
=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]= | =<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]= | ||
{| border="2" cellspacing="2" cellpadding="3" | {| border="2" cellspacing="2" cellpadding="3" | ||
| Line 9: | Line 10: | ||
|- | |- | ||
|Coil Power [W] | |Coil Power [W] | ||
| | |200 | ||
|- | |- | ||
|Platen Power [W] | |Platen Power [W] | ||
| | |25 | ||
|- | |- | ||
|Platen temperature [<sup>o</sup>C] | |Platen temperature [<sup>o</sup>C] | ||
| | |0 | ||
|- | |- | ||
|CF<sub>4</sub> flow [sccm] | |CF<sub>4</sub> flow [sccm] | ||
| | |20 | ||
|- | |- | ||
|H<sub>2</sub> flow [sccm] | |H<sub>2</sub> flow [sccm] | ||
| Line 24: | Line 25: | ||
|- | |- | ||
|Pressure [mTorr] | |Pressure [mTorr] | ||
| | |3 | ||
|- | |- | ||
|} | |} | ||
| Line 32: | Line 33: | ||
|-style="background:Black; color:White" | |-style="background:Black; color:White" | ||
!Results | !Results | ||
!Test | !Test by Artem Shikin @ Fotonik | ||
|- | |- | ||
|Etch rate of PECVD BPSG | |Etch rate of PECVD BPSG | ||
Revision as of 10:07, 11 February 2016
Feedback to this page: click here
THIS PAGE IS UNDER CONSTRUCTION
| Parameter | Resist mask |
|---|---|
| Coil Power [W] | 200 |
| Platen Power [W] | 25 |
| Platen temperature [oC] | 0 |
| CF4 flow [sccm] | 20 |
| H2 flow [sccm] | 10 |
| Pressure [mTorr] | 3 |
| Results | Test by Artem Shikin @ Fotonik |
|---|---|
| Etch rate of PECVD BPSG | 39.4nm/min (22-01-2016) |
| Selectivity to resist [:1] | Not known |
| Wafer uniformity (100mm) | Not known |
| Profile [o] | Not known |
| Wafer uniformity map (click on the image to view a larger image) | Not known |
| SEM profile images | NONE |
| Comment |