Specific Process Knowledge/Etch/III-V ICP/SiO2: Difference between revisions
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|Platen temperature [<sup>o</sup>C] | |Platen temperature [<sup>o</sup>C] | ||
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|CF<sub>4</sub> flow [sccm] | |CF<sub>4</sub> flow [sccm] | ||
Revision as of 10:47, 11 February 2016
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THIS PAGE IS UNDER CONSTRUCTION
| Parameter | Resist mask |
|---|---|
| Coil Power [W] | 800 |
| Platen Power [W] | 100 |
| Platen temperature [oC] | 20 |
| CF4 flow [sccm] | 30 |
| H2 flow [sccm] | 10 |
| Pressure [mTorr] | 4 |
| Results | Test on wafer with 50% load (Travka 50), by BGHE @danchip |
|---|---|
| Etch rate of PECVD BPSG | 39.4nm/min (22-01-2016) |
| Selectivity to resist [:1] | Not known |
| Wafer uniformity (100mm) | Not known |
| Profile [o] | Not known |
| Wafer uniformity map (click on the image to view a larger image) | Not known |
| SEM profile images | NONE |
| Comment |