Specific Process Knowledge/Etch/III-V ICP/SiO2: Difference between revisions
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=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]= | =<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]= | ||
{| border="2" cellspacing="2" cellpadding="3" | |||
|-style="background:Gray; color:White" | |||
!Parameter | |||
!Resist mask | |||
|- | |||
|Coil Power [W] | |||
|800 | |||
|- | |||
|Platen Power [W] | |||
|100 | |||
|- | |||
|Platen temperature [<sup>o</sup>C] | |||
|0 | |||
|- | |||
|CF<sub>4</sub> flow [sccm] | |||
|30 | |||
|- | |||
|H<sub>2</sub> flow [sccm] | |||
|10 | |||
|- | |||
|Pressure [mTorr] | |||
|4 | |||
|- | |||
|} | |||
{| border="2" cellspacing="2" cellpadding="3" | |||
|-style="background:Black; color:White" | |||
!Results | |||
!Test on wafer with 50% load (Travka 50), by BGHE @danchip | |||
|- | |||
|Etch rate of PECVD BPSG | |||
|'''39.4nm/min (22-01-2016)''' | |||
|- | |||
|Selectivity to resist [:1] | |||
|Not known | |||
|- | |||
|Wafer uniformity (100mm) | |||
|Not known | |||
|- | |||
|Profile [<sup>o</sup>] | |||
|Not known | |||
|- | |||
|Wafer uniformity map (click on the image to view a larger image) | |||
|Not known | |||
|- | |||
|SEM profile images | |||
|NONE | |||
|- | |||
|Comment | |||
| | |||
|- | |||
|} |
Revision as of 09:44, 11 February 2016
Feedback to this page: click here
THIS PAGE IS UNDER CONSTRUCTION
Parameter | Resist mask |
---|---|
Coil Power [W] | 800 |
Platen Power [W] | 100 |
Platen temperature [oC] | 0 |
CF4 flow [sccm] | 30 |
H2 flow [sccm] | 10 |
Pressure [mTorr] | 4 |
Results | Test on wafer with 50% load (Travka 50), by BGHE @danchip |
---|---|
Etch rate of PECVD BPSG | 39.4nm/min (22-01-2016) |
Selectivity to resist [:1] | Not known |
Wafer uniformity (100mm) | Not known |
Profile [o] | Not known |
Wafer uniformity map (click on the image to view a larger image) | Not known |
SEM profile images | NONE |
Comment |