Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace: Difference between revisions
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== | ==Overview of the performance of Aluminium Anneal furnace and some process related parameters== | ||
{| border="2" cellspacing="0" cellpadding="10" | {| border="2" cellspacing="0" cellpadding="10" | ||
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!style="background:silver; color:black;" align="left"|Purpose | !style="background:silver; color:black;" align="left"|Purpose | ||
|style="background:LightGrey; color:black"|Annealing | |style="background:LightGrey; color:black"|Annealing | ||
|style="background:WhiteSmoke; color:black"|Annealing of wafers containing aluminium. | |||
|- | |- | ||
!style="background:silver; color:black" align="left"|Performance | !style="background:silver; color:black" align="left"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness | ||
|style="background:WhiteSmoke; color:black"| | |||
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!style="background:silver; color:black" align="left"|Process parameter range | !style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameter range | ||
|style="background:LightGrey; color:black"|Process Temperature | |style="background:LightGrey; color:black"|Process Temperature | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*400-500 <sup>o</sup>C | *400-500 <sup>o</sup>C | ||
|- | |- | ||
|style="background:LightGrey; color:black"|Process pressure | |||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*1 atm | *1 atm | ||
|- | |- | ||
|style="background:LightGrey; color:black"|Gas flows | |||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*N<math>_2</math> | *N<math>_2</math> | ||
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!style="background:silver; color:black" align="left"|Substrates | !style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates | ||
|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*1-30 4" wafer (or 2" wafers) | *1-30 4" wafer (or 2" wafers) | ||
|- | |- | ||
| style="background:LightGrey; color:black"|Substrate material allowed | |||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
Silicon wafers with alluminium. | Silicon wafers with alluminium. | ||
Revision as of 15:23, 7 May 2008
C4 Furnace Aluminium Anneal
C4 Furnace Anneal is a Tempress horizontal furnace for annealing of silicon wafers with Aluminium.
This furnace is the lowest of the furnace tubes in the furnace C-stack positioned in cleanroom 2. The furnaces are the cleanest process chambers in the cleanroom. In this furnace it is allowed to enter wafers that contains aluminium. Check the cross contamination chart. If you are in doubt, please ask one from the furnace team.
Process knowledge
- Annealing: look at the Annealing page
| Purpose | Annealing | Annealing of wafers containing aluminium. |
|---|---|---|
| Performance | Film thickness | |
| Process parameter range | Process Temperature |
|
| Process pressure |
| |
| Gas flows |
| |
| Substrates | Batch size |
|
| Substrate material allowed |
Silicon wafers with alluminium. Wafers are allowed after alluminium lift off or after alluminium etch and resiststrip in acetone |
