Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace: Difference between revisions

Revision as of 15:11, 28 February 2008

C4 Furnace Aluminium Anneal

C4 Furnace Anneal is a Tempress horizontal furnace for annealing of silicon wafers with Aluminium.

This furnace is the lowest of the furnace tubes in the furnace C-stack positioned in cleanroom 2. The furnaces are the cleanest process chambers in the cleanroom. In this furnace it is allowed to enter wafers that contains aluminium. Check the cross contamination chart. If you are in doubt, please ask one from the furnace team.

Process knowledge

Annealing: look at the Annealing page

A rough overview of the performance of Aluminium Anneal furnace and some process related parameters

Purpose	Annealing	Annealing of wafers containing aluminium.
Performance	Film thickness	.
Process parameter range	Process Temperature	400-500 ^oC
.	Process pressure	1 atm
.	Gas flows	N $_{2}$
Substrates	Batch size	1-30 4" wafer (or 2" wafers)
.	Substrate material allowed	Silicon wafers with alluminium. Wafers are allowed after alluminium lift off or after alluminium etch and resiststrip in acetone

@@ Line 40: / Line 40: @@
 |style="background:silver; color:black"|.|| style="background:LightGrey; color:black"|Substrate material allowed
 |style="background:WhiteSmoke; color:black"|
-*Silicon wafers (new from the box or RCA cleaned)
+Silicon wafers with alluminium.
-**with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
+Wafers are allowed after alluminium lift off or after alluminium etch and resiststrip in acetone
-*Quartz wafers (RCA cleaned)
-*Wafers with aluminium.
 |-
 |}