Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy: Difference between revisions

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*Cleanroom of DTU Danchip
*Cleanroom of DTU Danchip
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*Basement of DTU Danchip
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*Cleanroom of DTU Danchip
*Cleanroom of DTU Danchip
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*Cleanroom of DTU Danchip
*Cleanroom of DTU Danchip
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*Basement of DTU Danchip
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*DTU CEN
*DTU CEN

Revision as of 09:13, 22 February 2016

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The Leo SEM

Scanning electron microscopy at Danchip

The SEM's at Danchip cover a wide range of needs both in the cleanroom and outside: From the fast in-process verification of different process parameters such as etch rates, step coverages or lift-off quality to the ultra high resolution images on any type of sample intended for publication. They are all manufactured by Carl Zeiss and have the same graphical user interface.

At the turn of the year 2015-2016 we made a reorganisation of the SEM's at Danchip. The old workhorse SEM's (the Leo and Zeiss) that have excellently served the users of the cleanroom for many years will be given new roles.

  • The Leo SEM is a very reliable and rugged instrument that provides high quality images of most samples. It is exclusively dedicated to the users of the Raith E-beam lithography system so general imaging of user samples is no longer allowed.
  • The SEM Supra 1 (formerly known as SEM Zeiss) has been relocated to the basement with two purposes: Serving the users that have samples from outside the cleanroom and serving as training tool; all new SEM users with no/little SEM experience must be trained on this tool and gain basic knowledge (typically 10 hours of usage) here before being qualified for training on other SEM's.

The two remaining SEM's at Danchip (called SEM Supra 2 and SEM Supra 3) serve as general imaging tools in the cleanroom. Like Supra 1, they are VP models from Carl Zeiss and will produce excellent images on any sample. The possibility of operating at higher chamber pressures in the VP mode makes imaging of bulk non-conducting samples possible. The SEM Supra 2 is also equipped with an airlock and an EDX detector.

The user manuals, quality control procedures and results, user APVs, technical information and contact information can be found in LabManager:
SEM's at DTU Danchip:

SEM's at DTU-Cen:


Common challenges in scanning electron microscopy

Equipment performance and process related parameters

Equipment SEM Leo SEM Supra 1 SEM Supra 2 SEM Supra 3 FEI Quanta 200 3D
Model Leo 1550 SEM Zeiss Supra 40 VP Zeiss Supra 60 VP Zeiss Supra 40 VP FEI Quanta 200 3D
Purpose Imaging and measurement of
  • Any (semi)conducting sample that may have thin (> ~ 5 µm) layers of non-conducting materials on top
  • Any sample except bulk insulators such as polymers, glass or quartz wafers
  • Any sample except bulk insulators such as polymers, glass or quartz wafers
  • Samples from the 'real' world outside the lab
  • Conductive samples
Instrument Position
  • Cleanroom of DTU Danchip
  • Basement of DTU Danchip
  • Cleanroom of DTU Danchip
  • Cleanroom of DTU Danchip
  • DTU CEN
Performance Resolution The resolution of a SEM is strongly dependent on the type of sample and the skills of the operator. The highest resolution is probably only achieved on special samples
  • ~ 5 nanometers (limited by vibrations)
  • 1-2 nm (limited by vibrations)
  • 1-2 nm (limited by vibrations)
  • 20 nm (limited by instrument)
  • ~3.5 nm (limited by instrument)
Instrument specifics Detectors
  • Secondary electron (Se2)
  • Inlens secondary electron (Inlens)
  • Backscatter electron (BSD)
  • Secondary electron (Se2)
  • Inlens secondary electron (Inlens)
  • 4 Quadrant Backscatter electron (QBSD) (out of order)
  • Variable pressure secondary electron (VPSE)
  • Secondary electron (Se2)
  • Inlens secondary electron (Inlens)
  • 4 Quadrant Backscatter electron (QBSD)
  • Variable pressure secondary electron (VPSE)
  • Secondary electron (SEI)
  • Backscatter electron (BEI)
  • Secondary electron (Everhart-Thornley (ETD))
  • Backscatter electron (BSD) - Add-on
  • Large Field Detector (LFD) - Add-on
  • CCD camera
Stage
  • X, Y: 125 × 100 mm
  • T: 0 to 90o
  • R: 360o
  • Z: 48 mm
  • X, Y: 130 × 130 mm
  • T: -4 to 70o
  • R: 360o
  • Z: 50 mm
  • X, Y: 150 × 150 mm
  • T: -10 to 70o
  • R: 360o
  • Z: XXX mm
  • X, Y: 73 × 40 mm
  • T: -10 to 90o
  • R: 360o
  • Z: 38 mm
  • X, Y: 25 × 25 mm
  • T: 0 to 60o
  • R: 360o
Electron source
  • FEG (Field Emission Gun) source
  • FEG (Field Emission Gun) source
  • FEG (Field Emission Gun) source
  • Tungsten filament
  • Tungsten filament
Operating pressures
  • Fixed at High vacuum (2 × 10-5mbar - 10-6mbar)
  • Fixed at High vacuum (2 × 10-4mbar - 10-6mbar)
  • Variable at Low vacuum (0.1 mbar-2 mbar)
  • Fixed at High vacuum (2 × 10-4mbar - 10-6mbar)
  • Variable at Low vacuum (0.1 mbar-2 mbar)
  • Fixed at High vacuum
  • High vacuum and Low vacuum
Options
  • Raith Elphy Quantum E-Beam Litography system
  • All software options available
  • Antivibration platform
  • Fjeld M-200 airlock taking up to 8" wafers
  • Oxford Instruments X-MaxN 50 mm2 SDD EDX detector and AZtec software package
  • Focused ion beam (FIB) (Ga+ ions)
Substrates Sample sizes
  • Wafers up to 6" (only full view up to 4")
  • Up to 6" wafer with full view
  • Up to 8" wafer with 6" view
  • Up to 4" wafer
  • Wafers won´t fit without a proper holder. The height of the sample is critical, should be as small, as possible
Allowed materials
  • Any standard cleanroom material except graphene or CNT samples
  • Any standard cleanroom material except graphene or CNT samples
  • Any standard cleanroom material except graphene or CNT samples
  • Any standard cleanroom material including graphene or CNT samples
  • Biological samples
  • Conductive materials
  • No biological samples