Specific Process Knowledge/Lithography: Difference between revisions
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=Training= | =Training= | ||
<span style="background:#FF2800">THIS SECTION IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]] | <span style="background:#FF2800">THIS SECTION IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]] | ||
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'''<big>Literature</big>''' | |||
*[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]] | |||
'''<big>Spin Coating</big>''' | |||
*[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]] | |||
'''<big>UV Exposure</big>''' | |||
*[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]] | |||
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'''<big>Electron Beam Exposure</big>''' | |||
*[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]] | |||
'''<big>Deep-UV Exposure</big>''' | |||
*[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]] | |||
'''<big>Development</big>''' | |||
*[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]] | |||
'''<big>Post Processing</big>''' | |||
*[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]] | |||
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'''<big>UV Resists</big>''' | |||
*[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]] | |||
'''<big>OM Inspection</big>''' | |||
*[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]] | |||
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Revision as of 10:23, 29 January 2016

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Comparing lithography methods at DTU Danchip
| UV Lithography | DUV Stepper Lithography | E-beam Lithography | Nano Imprint Lithography | 2-Photon Polymerization Lithography | |
|---|---|---|---|---|---|
| Generel description | Pattern transfer via UltraViolet (UV) light | Pattern transfer via DeepUltraViolet (DUV) light | Patterning by electron beam | Pattern transfer via hot embossing(HE) | Direct writing via IR laser |
| Pattern size range |
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| Resist type |
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| Resist thickness range |
~0.5µm to 20µm |
~50nm to 2µm |
~30nm to 0.5 µm |
~ 100nm to 2µm |
droplet or coating |
| Typical exposure time |
2s-30s pr. wafer |
Process depended, depends on pattern, pattern area and dose |
Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I |
Process depended, depends also on heating and cooling temperature rates |
Process depended, depends on pattern and dose |
| Substrate size |
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We have cassettes that fit to
Only one cassette can be loaded at time |
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| Allowed materials |
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Equipment Pages
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3D Lithography | ||
Training
THIS SECTION IS UNDER CONSTRUCTION
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Literature Spin Coating UV Exposure
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Deep-UV Exposure Development Post Processing
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UV Resists OM Inspection
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