Specific Process Knowledge/Lithography: Difference between revisions
Appearance
| Line 21: | Line 21: | ||
!width="16%"| [[Specific Process Knowledge/Lithography/NanoImprintLithography|Nano Imprint Lithography]] | !width="16%"| [[Specific Process Knowledge/Lithography/NanoImprintLithography|Nano Imprint Lithography]] | ||
!width="16%"| [[Specific Process Knowledge/Lithography/3DLithography|2-Photon Polymerization Lithography]] [[Image:section under construction.jpg|70px]] | !width="16%"| [[Specific Process Knowledge/Lithography/3DLithography|2-Photon Polymerization Lithography]] [[Image:section under construction.jpg|70px]] | ||
|- | |||
|- | |- | ||
| Line 33: | Line 33: | ||
|Direct writing via IR laser | |Direct writing via IR laser | ||
|- | |- | ||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
!Getting started | |||
|[[Specific_Process_Knowledge/Lithography/UVLithography#Getting_started|Getting started with UV lithography]] | |||
| | |||
|[[Specific_Process_Knowledge/Lithography/EBeamLithography#Getting_started|Getting started with E-beam lithography]] | |||
| | |||
| | |||
|- | |||
|- | |- | ||
Revision as of 11:44, 28 January 2016

Feedback to this page: click here
Comparing lithography methods at DTU Danchip
| UV Lithography | DUV Stepper Lithography | E-beam Lithography | Nano Imprint Lithography | 2-Photon Polymerization Lithography | |
|---|---|---|---|---|---|
| Generel description | Pattern transfer via UltraViolet (UV) light | Pattern transfer via DeepUltraViolet (DUV) light | Patterning by electron beam | Pattern transfer via hot embossing(HE) | Direct writing via IR laser |
| Getting started | Getting started with UV lithography | Getting started with E-beam lithography | |||
| Pattern size range |
|
|
|
|
|
| Resist type |
|
|
|
|
|
| Resist thickness range |
~0.5µm to 20µm |
~50nm to 2µm |
~30nm to 0.5 µm |
~ 100nm to 2µm |
droplet or coating |
| Typical exposure time |
2s-30s pr. wafer |
Process depended, depends on pattern, pattern area and dose |
Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I |
Process depended, depends also on heating and cooling temperature rates |
Process depended, depends on pattern and dose |
| Substrate size |
|
|
We have cassettes that fit to
Only one cassette can be loaded at time |
|
|
| Allowed materials |
|
|
|
|
|
Equipment Pages