Specific Process Knowledge/Etch/KOH Etch: Difference between revisions
| Line 107: | Line 107: | ||
For Si(100), the relation between the width of the bottom of the etched groove (W<sub>b</sub>) and the width of the opening (W<sub>o</sub>) at the wafer surface in a groove etched to the depth l is given by: | For Si(100), the relation between the width of the bottom of the etched groove (W<sub>b</sub>) and the width of the opening (W<sub>o</sub>) at the wafer surface in a groove etched to the depth l is given by: | ||
W<sub>b</sub> = W | |||
W<sub>b</sub> = W<sub>o</sub> - 2lcot(54.7<sup>o</sup>) = W<sub>o</sub> - | |||