Specific Process Knowledge/Thermal Process/Dope with Boron: Difference between revisions
| Line 49: | Line 49: | ||
<br clear="all" /> | <br clear="all" /> | ||
[[image:60min_Predep_WET950.jpg|500x600px|left|thumb|SIMS Measurement at 5 different positions after pre-deposition of boron.The SIMS measurement shows a good uniformity across the wafer]] | {| border="1" cellspacing="1" cellpadding="2" align="left" | ||
[[image:Boron_doping_profiles.jpg|500x600px|left|thumb|SIMS Measurement for 3 different pre-deposition times 30 min, 60 min and 90 min with and without a 30 min WET950 oxidation step.]] | |[[image:60min_Predep_WET950.jpg|500x600px|left|thumb|SIMS Measurement at 5 different positions after pre-deposition of boron.The SIMS measurement shows a good uniformity across the wafer]]||[[image:Boron_doping_profiles.jpg|500x600px|left|thumb|SIMS Measurement for 3 different pre-deposition times 30 min, 60 min and 90 min with and without a 30 min WET950 oxidation step.]] | ||
|} | |||
<br clear="all" /> | <br clear="all" /> | ||