Specific Process Knowledge/Thermal Process/Dope with Boron: Difference between revisions
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[[image:60min_Predep_WET950.jpg|500x600px|left|thumb|SIMS Measurement at 5 different positions after pre-deposition of boron]] | [[image:60min_Predep_WET950.jpg|500x600px|left|thumb|SIMS Measurement at 5 different positions after pre-deposition of boron.The SIMS measurement shows a good uniformity across the wafer]] | ||
[[image:Boron_doping_profiles.jpg|500x600px|left|thumb|SIMS Measurement for 3 different pre-deposition times 30 min, 60 min and 90 min with and without a 30 min WET950 oxidation step.]] | [[image:Boron_doping_profiles.jpg|500x600px|left|thumb|SIMS Measurement for 3 different pre-deposition times 30 min, 60 min and 90 min with and without a 30 min WET950 oxidation step.]] | ||
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