Specific Process Knowledge/Etch/Etching of Silicon Nitride: Difference between revisions
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*Isotropic etch | *Isotropic etch | ||
*Well suited for removing all nitride on a wafer surface (nitride strip) without a mask. High selectivity Si<sub>3</sub>N<sub>4</sub>/Si (>100) and Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> (>20) @ | *Well suited for removing all nitride on a wafer surface (nitride strip) without a mask. High selectivity Si<sub>3</sub>N<sub>4</sub>/Si (>100) and Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> (>20) @ 160 C. | ||
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*Isotropic etch | *Isotropic etch | ||
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!Etch rate range | !Etch rate range | ||
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*Si<sub>3</sub>N<sub>4</sub> @ 160 <sup>o</sup>C: ~60 Å/min | *Si<sub>3</sub>N<sub>4</sub> @ 160 <sup>o</sup>C: ~60 Å/min | ||
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