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Specific Process Knowledge/Etch/Wet Silicon Nitride Etch: Difference between revisions

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*~26 Å/min (Si-rich Si<sub>3</sub>N<sub>4</sub>)
*~26 Å/min (Si-rich Si<sub>3</sub>N<sub>4</sub>)
*~? Å/min (Thermal oxide)
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|'''Selectivity R<sub>Si<sub>3</sub>N<sub>4</sub></sub> / R<sub>SiO<sub>2</sub></sub>'''
|'''Selectivity R<sub>Si<sub>3</sub>N<sub>4</sub></sub> / R<sub>SiO<sub>2</sub></sub>'''