Specific Process Knowledge/Thermal Process/Dope with Boron: Difference between revisions
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====Result==== | ====Result==== | ||
''' | ''' | ||
The samples for SIMS measurements corresponds to 5 different positions on the wafer. | |||
[[image:Waferlayout.jpg|300x300px|left|thumb|Sample position on the wafer]] | |||
The SIMS measurement shows a good uniformity | The SIMS measurement shows a good uniformity | ||
[[image:Boron_doping_profiles-w1.jpg|500x600px|left|thumb|SIMS Measurement at 4 different positions after Pre-deposition of boron | [[image:Boron_doping_profiles-w1.jpg|500x600px|left|thumb|SIMS Measurement at 4 different positions after Pre-deposition of boron]] | ||
<br clear="all" /> | <br clear="all" /> | ||