Specific Process Knowledge/Thermal Process/Dope with Boron: Difference between revisions
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[[image:Boron_doping_profiles-w1.jpg|500x600px|left|thumb|SIMS Measurement at 4 different positions after Pre-deposition of boron]] | [[image:Boron_doping_profiles-w1.jpg|500x600px|left|thumb|SIMS Measurement at 4 different positions after Pre-deposition of boron]] | ||
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Revision as of 14:23, 7 December 2015
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Dope with boron
The furnace A1 Boron Drive-in and Pre-dep can be used to pre-deposit silicon wafers with boron. The silicon wafers are positioned in a silicon carbide boat just next to wafers of boron nitride. Pre-deposit of boron is a diffusion process on the silicon wafers.
The concentration of boron in the wafer depends on the process temperature. The depth profile depends of the process time.
All this figures have been made at the time where there was a furnace only for Boron Pre-dep (furnace A2). The process was done with the temperature at 1125 oC and a flow of 5 slm N2 and 0.2 slm of O2.
- Boron profiles from SIMS
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Pre-depostion for 1 hour at 1125 °C -
Pre-depostion for 6 hour at 1125 °C -
Pre-depostion for 16 hour at 1125 °C
<gallery caption="Boron diffusion depth vs. pre-deposition time" widths="400px" heights="300px" perrow="3"> image:borDiffusionDepthtable.jpg image:B_Diff_depth_vs_time_.jpg
Uniformity test
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