Specific Process Knowledge/Wafer cleaning/cleaning with HF: Difference between revisions

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Is in use during the RCA procedure. This bath must only be used in the RCA procedure or to remove native oxide on new wafers from the box. See the RCA page for further details or the oxide etch page.

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			'''Feedback to this page''': '''[mailto:wetchemistry@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Wafer_cleaning/cleaning_with_HF click here]'''


	Is in use during the RCA procedure. This bath must only be used in the RCA procedure or to remove native oxide on new wafers from the box. See the [[Specific Process Knowledge/Wafer cleaning/RCA\|RCA]] page for further details or the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)\|oxide etch]] page.		Is in use during the RCA procedure. This bath must only be used in the RCA procedure or to remove native oxide on new wafers from the box. See the [[Specific Process Knowledge/Wafer cleaning/RCA\|RCA]] page for further details or the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)\|oxide etch]] page.