Specific Process Knowledge/Thin film deposition/PECVD/Doping: Difference between revisions
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==Boron-doping by use of BSG glass deposited in PECVD2== | ==Boron-doping by use of BSG glass deposited in PECVD2== | ||
''Results from Joachim Dahl Thomsen, Nanotech, 2014'' | |||
===Recipe=== | ===Recipe=== | ||
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==Boron-doping by use of BSG glass deposited in PECVD2== | ==Boron-doping by use of BSG glass deposited in PECVD2== | ||
''Results from | ''Results from Trine Holm Christensen, Space, Feb. 2015'' | ||
===Recipe=== | ===Recipe=== | ||
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'''Anneal in Furnace (C1):''' ANN950, 60 min in N<sub>2</sub> | '''Anneal in Furnace (C1):''' ANN950, 60 min in N<sub>2</sub> | ||
The wafers were then analyzed by SIMS and the results are shown in the figure below: | |||
[[image:PECVD_Boron_doping_profiles.jpg|627x424px|left|thumb|Boron concentration measured by SIMS. Results from Trine Holm Christensen, Space, Feb. 2015.]] | |||
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