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Recipe

Recipe name	SiH4 flow [sccm]	N₂O flow [sccm]	N2 flow [sccm]	B2H6 flow [sccm]	PH3 flow [sccm]	Pressure [mTorr]	Power [W]	Description
1PBSG	17	1600	0	120, 130, 140, 160, 240	0	400	380	BPSG glass for drive in boron in Silicon

5 tests were made where only the B2H6 flow was changed (120sccm,130sccm,140sccm,160sccm,240sccm). All deposition times were 2 min (resulting in 440 nm Oxide). The wafers were annealed in Anneal Oxide Furnace (C1) at 1000°C for 85 min to drive in the boron and the oxide was subsequently etched in BHF. The wafers were then analysed by SIMS and the results are shown in the figure below:

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	[[image:SIMS2.png\|627x424px\|left\|thumb\|Boron concentration measured by SIMS. Result from Joachim Dahl Thomsen, Nanotech, 2014.]]		[[image:SIMS2.png\|627x424px\|left\|thumb\|Boron concentration measured by SIMS. Result from Joachim Dahl Thomsen, Nanotech, 2014.]]

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