Specific Process Knowledge/Thin film deposition/PECVD/Doping: Difference between revisions
| Line 14: | Line 14: | ||
|N2 flow [sccm] | |N2 flow [sccm] | ||
|B2H6 flow [sccm] | |B2H6 flow [sccm] | ||
|PH3 flow [sccm] | |||
|Pressure [mTorr] | |Pressure [mTorr] | ||
|Power [W] | |Power [W] | ||
| Line 22: | Line 23: | ||
|1600 | |1600 | ||
|0 | |0 | ||
| | |120, 130, 140, 160, 240 | ||
| | |0 | ||
| | |400 | ||
|BPSG glass for drive in boron in | |380 | ||
|BPSG glass for drive in boron in Silicon | |||
|} | |} | ||
5 tests were made where only the B2H6 flow was changed (120sccm,130sccm,140sccm,160sccm,240sccm). All deposition times were 2 min (resulting in 440 nm Oxide). | |||
The wafers were annealed in Anneal Oxide Furnace (C1) at 1000°C for 85 min to drive in the boron and the oxide was subsequently etched in BHF. The wafers were then analysed by SIMS and the results are shown in the figure below: | |||
[[image:SIMS2.png|627x424px|left|thumb|Boron concentration measured by SIMS. Result from Joachim Dahl Thomsen, Nanotech, 2014.]] | |||
Revision as of 10:53, 1 December 2015
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Recipe
| Recipe name | SiH4 flow [sccm] | N2O flow [sccm] | N2 flow [sccm] | B2H6 flow [sccm] | PH3 flow [sccm] | Pressure [mTorr] | Power [W] | Description |
| 1PBSG | 17 | 1600 | 0 | 120, 130, 140, 160, 240 | 0 | 400 | 380 | BPSG glass for drive in boron in Silicon |
5 tests were made where only the B2H6 flow was changed (120sccm,130sccm,140sccm,160sccm,240sccm). All deposition times were 2 min (resulting in 440 nm Oxide). The wafers were annealed in Anneal Oxide Furnace (C1) at 1000°C for 85 min to drive in the boron and the oxide was subsequently etched in BHF. The wafers were then analysed by SIMS and the results are shown in the figure below:
