Specific Process Knowledge/Wafer cleaning/RCA

RCA cleaning

The RCA clean is used for cleaning the wafers before taking them into the furnaces and a few other equipments (check the cross contamination sheet). It consist of two solutions: RCA1 and RCA2 plus diluted HF.

The RCA1 contains: H$_{2}$O, NH$_{4}$OH and H$_{2}$O$_{2}$ (5:1:1). It is used for removed of light organics, particles and metal.
The RCA2 contains: H$_{2}$0, HCl and H$_{2}$O$_{2}$ (5:1:1). It is used for removal of heavy metals, alkalies and metal hydroxides.

RCA procedure

• RCA1: 10 min
• DI wafer rinsing (dumping three times)
• HF: 30 sec (avoid it if you have oxide as the top layer)
• DI wafer rinsing (dumping three times)
• RCA2: 10 min
• DI wafer rinsing (dumping three times)
• HF: 30 sec (avoid it if you have oxide as the top layer)
• DI wafer rinsing (dumping three times)

Overview of RCA process data

	RCA1	RCA2	HF
General description	It is used for removal of light organics, particles and metal.	It is used for removal of light organics, particles and metal.	It is used for removal of oxide generated in RCA1 and RCA2
Chemical solution	H$_{2}$O, NH$_{4}$OH and H$_{2}$O$(29\%)_{2}$(30%) (5:1:1)	H$_{2}$0, HCl(37%) and H$_{2}$O$_{2}$(30%) (5:1:1)	5% HF
Process temperature	70-80 oC	70-80 oC	Room temperature
Process time	10 min.	10 min.	30 sec.
Allowed materials	Silicon Silicon oxide Silicon nitride Quartz wafers	Silicon Silicon oxide Silicon nitride Quartz wafers	Silicon Silicon oxide Silicon nitride
Batch size	1-25 4" or 6" wafers at a time	1-25 4" or 6" wafers at a time	1-25 4" or 6" wafers at a time
Size of substrate	4"-6" wafers	4"-6" wafers