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Specific Process Knowledge/Wafer cleaning/RCA: Difference between revisions

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|'''General description'''
|'''General description'''
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Cleaning of wafers or masks using the dedicated tanks. There are one tank for masks and glass wafers and one for 4-6" Si wafers in cleanroom 4 and one tank in cleanroom 3 for 4" Si wafers only.
It is used for removal of light organics, particles and metal.
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Cleaning of wafers using a beaker in the fumehood in cleanroom 2. Used for glass wafers or wafers with metal or other materials that you are not allowed to put in the 7-up for wafers.
It is used for removal of light organics, particles and metal.
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It is used for removal of oxide generated in RCA1 and RCA2
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|'''Chemical solution'''
|'''Chemical solution'''
|98% Sulfuric acid and Ammonium sulfate
|H<math>_2</math>O, NH<math>_4</math>OH and H<math>_2</math>O<math>(29%)_2</math>(30%) (5:1:1)
|98% Sulfuric acid and Hydrogen peroxide 4:1 add H<math>_2</math>O<math>_2</math> to H<math>_2</math>SO<math>_4</math>
|H<math>_2</math>0, HCl(37%) and H<math>_2</math>O<math>_2</math>(30%) (5:1:1)
|5% HF
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|'''Process temperature'''
|'''Process temperature'''
|80 <sup>o</sup>C
|70-80 <sup>o</sup>C
 
|70-80 <sup>o</sup>C
|~70 <sup>o</sup>C the chemicals will heat up to working temperature during mixing, '''therefore be careful!'''
|Room temperature  
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|'''Process time'''
|'''Process time'''
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10 min.
10 min.
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30 sec.
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|'''Allowed materials'''
|'''Allowed materials'''
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Dependent on which bath is used, look at the text in the pictures.
*Silicon
*Silicon oxide
*Silicon nitride
*Quartz wafers
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All materials (in beaker).
*Silicon
*Silicon oxide
*Silicon nitride
*Quartz wafers
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*Silicon
*Silicon oxide
*Silicon nitride
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|'''Batch size'''
|'''Batch size'''
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1-19/25 4" wafers or 4 masks at a time  
1-25 4" or 6" wafers at a time
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1-25 4" or 6" wafers at a time
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1-5 4" wafer at a time
1-25 4" or 6" wafers at a time
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|'''Size of substrate'''
|'''Size of substrate'''
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4-6" wafers
4"-6" wafers
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2-4" wafers
4"-6" wafers
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