Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium: Difference between revisions
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The Chromium etch was carried out on the following substrate stack: | The Chromium etch was carried out on the following substrate stack: | ||
2" Si wafer with Cr laying in a 6" Si wafer with a 4" recess. The area outside the recess was covered by AZ resist. | 2" Si wafer with Cr laying in a 6" Si wafer with a 4" recess. The area outside the recess was covered by AZ resist. | ||
The work was carried out be Erol Zekovic @Nanotech and BGHE@ | The work was carried out be Erol Zekovic @Nanotech and BGHE@nanolab | ||
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|+ '''Cr etch''' | |+ '''Cr etch''' |
Revision as of 14:44, 25 January 2019
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Chromium etch in ICP metal - small substrate using carrier
The Chromium etch was carried out on the following substrate stack: 2" Si wafer with Cr laying in a 6" Si wafer with a 4" recess. The area outside the recess was covered by AZ resist. The work was carried out be Erol Zekovic @Nanotech and BGHE@nanolab
Parameter | Cr etch |
---|---|
Cl2 (sccm) | 65 |
O2 (sccm) | 15 |
Pressure (mTorr) | 15 |
Coil power (W) | 300 |
Platen power (W) | 15 |
Temperature (oC) | 50 |
Spacers (mm) | 100 |
Etch rate (nm/min) | ~32 (Date: 2014-08-13) |
Zep520A resist selectivity | NA |
Comment | Was masked by capton tape |
Chromium etch in ICP metal on a thick glass substrate
The Chromium etch has ONLY been carried out on the following substrate stack: The Chromium is sputter deposited onto a 2" quartz wafer and pattered by e-beam with Zep520A resist. This 2" QZ wafer is bonded with crystal bond to a 65mmx65mm quartz plate with the thickness: 6.35mm. This QZ plate is bonded to a Si wafer.
Parameter | Cr etch |
---|---|
Cl2 (sccm) | 65 |
O2 (sccm) | 15 |
Pressure (mTorr) | 15 |
Coil power (W) | 300 |
Platen power (W) | 15 |
Temperature (oC) | 50 (no back side cooling) |
Spacers (mm) | 100 |
Etch rate (nm/min) | ~14 |
Zep520A resist selectivity | ~0.9 |
Comment | . |