Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing: Difference between revisions
| Line 283: | Line 283: | ||
|taran | |taran | ||
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm | |4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm | ||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
|Silicon with native oxide | |||
|1.572 | |||
|0.8% | |||
|4/11 2015 | |||
|taran | |||
|4" wafer, with HMDS. 9 points on one wafer, exclusion zone 5mm | |||
|} | |} | ||
| Line 319: | Line 327: | ||
|taran | |taran | ||
|SAT results. 6" wafer, with HMDS. 5 wafers measured: thickness is average of all 5; uniformity is worst case. 13 points on each wafer, exclusion zone 5mm. | |SAT results. 6" wafer, with HMDS. 5 wafers measured: thickness is average of all 5; uniformity is worst case. 13 points on each wafer, exclusion zone 5mm. | ||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
|Silicon with native oxide | |||
|2.064 | |||
|0.8% | |||
|4/11 2015 | |||
|taran | |||
|4" wafer, with HMDS. 9 points on one wafer, exclusion zone 5mm | |||
|} | |} | ||
| Line 347: | Line 363: | ||
|taran | |taran | ||
|4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm | |4" wafer, no HMDS. 9 points on one wafer, exclusion zone 5mm | ||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
|Silicon with native oxide | |||
|4.131 | |||
|0.5% | |||
|4/11 2015 | |||
|taran | |||
|4" wafer, with HMDS. 9 points on one wafer, exclusion zone 5mm | |||
|} | |} | ||