Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride

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Deposition of Aluminium Nitride

AlN can be deposited by using sputtering method with AlN target or reactive sputtering method with Al target in mixtures of argon and nitrogen. AlN film can be deposited by using the Cryofox PVD co-sputter/evaporation or the Lesker Sputter System.

• Al_xN_y in PVD co-sputter/evaporation
  

Only one method at the moment

	Cryofox PVD co-sputter/evaporation	Sputter System Lesker
Generel description	Reactive Sputtering ( 6" Al target) or AlN target sputtering	Reactive Sputtering ( 2" Al target)
Stoichiometry	Depend on the target power	Not tested
Film Thickness	0nm - 200nm	0nm - 200nm
Deposition rate	Not tested	Not tested
Step coverage	Very good	Very good
Process Temperature	Up to 400oC	Up to 450oC
Substrate size	100 mm wafers (Up to 12 wafers at a time) 150 mm wafers (Up to 4 wafers at a time)	chips 1x 100 mm wafer 1x 150 mm wafer
Allowed materials	Silicon Silicon oxide, silicon nitride Quartz/fused silica Photoresist PMMA Mylar SU-8 Any metals	almost any