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| == Overlay accuracy (layer to layer stitching) ==
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| In this experiment, a set of Vernier marks (L1) were exposed along with global marks and chip marks in appr 170 nm CSAR. This layer was developed, metalized and lift-off. A new layer of resist (appr 170 nm CSAR) was spin coated onto the wafer. A second set of Vernier marks (L2) was aligned to two gloabl marks and 4 chip marks and exposed. Layer 2 was developed, metalized and lift-off. The final pattern SEM inspected in Zeiss Supra 60VP.
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| {|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 95%"
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| |-style="background:Black; color:White"
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| !colspan="6"|wafer 11.17 Stitching accuracy, Processed by TIGRE, April 2015
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| |-style="background:WhiteSmoke; color:black"
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| !Resist
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| !E-beam exposure
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| !Development
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| !Metallisation
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| !Lift-off
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| !Characterisation
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| |-style="background:WhiteSmoke; color:black"
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| |CSAR AR-P6200 AllResist, 4000 rpm, 60s, softbaked 60s @ 150degC
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| |JBX9500 E-2, 2nA aperture 5, dose 300 µC/cm2, L1: 1st set of Vernier scales, 6 global marks and 4 chip marks in every chip
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| |AR-600-546, 60 s
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| |5 nm Ti, 45 nm Au, Wordentec (D-2)
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| |AR-600-71, 5-10 min, 4s ultrasonic (D-3)
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| |-style="background:WhiteSmoke; color:black"
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| |CSAR AR-P6200 AllResist, 4000 rpm, 60s, softbaked 60s @ 150degC
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| |JBX9500 E-2, 2nA aperture 5, dose 300 µC/cm2, L2: 2nd set of Vernier scales aligned to 2 global marks and 4 chip marks in every chip (scan width 10 µm)
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| |AR-600-546, 60 s
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| |5 nm Ti, 45 nm Au, Wordentec (D-2)
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| |AR-600-71, 5-10 min, 4s ultrasonic (D-3)
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| |Zeiss Supra 60VP, 10kV, Inlens detector
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| The Vernier scales were distributed over the entire writing field: C = center, UR/LR/LL/UL = Upper/Lower Right/Left, MN/ME/MS/MW = Middle North/East/South/West.
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| [[File:LayerToLayer1.png|700px]]
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| [[File:LayerToLayer2.png|700px]]
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| <br clear="all" />
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| <br> <br>
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| = Proximity Error Correction = | | = Proximity Error Correction = |
