Jump to content

Specific Process Knowledge/Lithography/EBeamLithography/JBX9500Manual: Difference between revisions

Tigre (talk | contribs)
Tigre (talk | contribs)
Line 259: Line 259:
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!style="background:#ADD8E6; color:Black"|[[Specific_Process_Knowledge/Lithography/EBeamLithography/JBX9500Manual#DISTMEM_and_DISTBE|DISTMEM]]
!style="background:#ADD8E6; color:Black"|[[Specific_Process_Knowledge/Lithography/EBeamLithography/JBX9500Manual#DISTMEM_and_DISTBE|DISTMEM]]
|This subprogram measures the distortion of the beam deflection 7 x 7 positions within the main writing field and generates a distortion correction table. The system routinely positions the BE mark in all 49 positions and uses only the primary deflector to scan the BE mark in every 49 positions. The program sets the distortion directly below the beam (center of the field) to zero. The distortion correction memory in every position in the main writing field is generated by a linear approximation based on the 7 x 7 table. For 0.2 nA or 2 nA, a reasonable convergence value is e.g. 6 nm.
|This subprogram measures the distortion of the beam deflection 7 x 7 positions within the main writing field and generates a distortion correction table. The system positions the BE mark in all 49 positions and uses only the primary deflector to scan the BE mark in every 49 positions. The program sets the distortion directly below the beam (center of the field) to zero. The distortion correction memory in every position in the main writing field is generated by a linear approximation based on the 7 x 7 table. For 0.2 nA or 2 nA, a reasonable convergence value is e.g. 6 nm.
|-
|-


Line 265: Line 265:
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!style="background:#ADD8E6; color:Black"|[[Specific_Process_Knowledge/Lithography/EBeamLithography/JBX9500Manual#DISTMEM_and_DISTBE|DISTBE]]
!style="background:#ADD8E6; color:Black"|[[Specific_Process_Knowledge/Lithography/EBeamLithography/JBX9500Manual#DISTMEM_and_DISTBE|DISTBE]]
|This subprogram measures the distortion of the beam deflection 7 x 7 positions within the main writing field and generates a distortion correction table. The system routinely positions the BE mark in all 49 positions and uses only the primary deflector to scan the BE mark in every 49 positions. The program sets the distortion directly below the beam (center of the field) to zero. The distortion correction memory in every position in the main writing field is generated by a cubic approximation based on the 7 x 7 table. For 0.2 nA or 2 nA, a reasonable convergence value is e.g. 8 nm.
|This subprogram measures the distortion of the beam deflection 7 x 7 positions within the main writing field and generates a distortion correction table. The system positions the BE mark in all 49 positions and uses only the primary deflector to scan the BE mark in every 49 positions. The program sets the distortion directly below the beam (center of the field) to zero. The distortion correction memory in every position in the main writing field is generated by a cubic approximation based on the 7 x 7 table. For 0.2 nA or 2 nA, a reasonable convergence value is e.g. 8 nm.
|-
|-