Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
| Line 161: | Line 161: | ||
|Standard positive resist, very similar to ZEP520. | |Standard positive resist, very similar to ZEP520. | ||
|[[media:Allresist_CSAR62_English.pdf|Allresist_CSAR62_English.pdf]],, [[media:CSAR_62_Abstract_Allresist.pdf|CSAR_62_Abstract_Allresist.pdf]] | |[[media:Allresist_CSAR62_English.pdf|Allresist_CSAR62_English.pdf]],, [[media:CSAR_62_Abstract_Allresist.pdf|CSAR_62_Abstract_Allresist.pdf]] | ||
|See table <u>[[ | |See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u> | ||
|Anisole | |Anisole | ||
|AR-600-546, AR-600-548, N50, MIBK:IPA | |AR-600-546, AR-600-548, N50, MIBK:IPA | ||
| Line 175: | Line 175: | ||
|Positive resist | |Positive resist | ||
|[[media:ZEP520A.pdf|ZEP520A.pdf]], [[media:ZEP520A.xls|ZEP520A spin curves on SSE Spinner]] | |[[media:ZEP520A.pdf|ZEP520A.pdf]], [[media:ZEP520A.xls|ZEP520A spin curves on SSE Spinner]] | ||
|[[Specific_Process_Knowledge/Lithography/Coaters# | |See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u> | ||
|Anisole | |Anisole | ||
|ZED-N50/Hexyl Acetate,n-amyl acetate, oxylene. [[media:JJAP-51-06FC05.pdf|JJAP-51-06FC05.pdf]], [[media:JVB001037.pdf|JVB001037.pdf]] | |ZED-N50/Hexyl Acetate,n-amyl acetate, oxylene. [[media:JJAP-51-06FC05.pdf|JJAP-51-06FC05.pdf]], [[media:JVB001037.pdf|JVB001037.pdf]] | ||
| Line 192: | Line 192: | ||
|Approved, not tested yet. Used for trilayer (PEC-free) resist-stack or double-layer lift-off resist stack. Please contact [mailto:Lithography@danchip.dtu.dk Lithography] for information. | |Approved, not tested yet. Used for trilayer (PEC-free) resist-stack or double-layer lift-off resist stack. Please contact [mailto:Lithography@danchip.dtu.dk Lithography] for information. | ||
|[[media:AR_P617.pdf|AR_P617.pdf]] | |[[media:AR_P617.pdf|AR_P617.pdf]] | ||
|[[Specific_Process_Knowledge/Lithography/Coaters# | |See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u> | ||
|PGME | |PGME | ||
|AR 600-55, MIBK:IPA | |AR 600-55, MIBK:IPA | ||
| Line 206: | Line 206: | ||
|Standard negative resist | |Standard negative resist | ||
|[[media:mrEBL6000 Processing Guidelines.pdf|mrEBL6000 processing Guidelines.pdf]] | |[[media:mrEBL6000 Processing Guidelines.pdf|mrEBL6000 processing Guidelines.pdf]] | ||
|[[Specific_Process_Knowledge/Lithography/Coaters# | |See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u> | ||
|Anisole | |Anisole | ||
|mr DEV | |mr DEV | ||
| Line 222: | Line 222: | ||
|Approved. Standard negative resist, mainly for III-V materials | |Approved. Standard negative resist, mainly for III-V materials | ||
| | | | ||
|[[Specific_Process_Knowledge/Lithography/Coaters# | |See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u> | ||
| | | | ||
|TMAH, AZ400K:H2O | |TMAH, AZ400K:H2O | ||
| Line 236: | Line 236: | ||
|Both e-beam, DUV and UV-sensitive resist. Currently being tested, contact [mailto:pxshi@danchip.dtu.dk Peixiong Shi] for information. | |Both e-beam, DUV and UV-sensitive resist. Currently being tested, contact [mailto:pxshi@danchip.dtu.dk Peixiong Shi] for information. | ||
|[[media:AR-N7500-7520.pdf|AR-N7500-7520.pdf]] | |[[media:AR-N7500-7520.pdf|AR-N7500-7520.pdf]] | ||
|[[Specific_Process_Knowledge/Lithography/Coaters# | |See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u> | ||
|PGMEA | |PGMEA | ||
|AR 300-47, TMAH | |AR 300-47, TMAH | ||
| Line 279: | Line 279: | ||
|We have various types of PMMA in the cleanroom, none are provided by DTU Danchip. Please contact [mailto:Lithography@danchip.dtu.dk Lithography] for information. | |We have various types of PMMA in the cleanroom, none are provided by DTU Danchip. Please contact [mailto:Lithography@danchip.dtu.dk Lithography] for information. | ||
| | | | ||
|[[Specific_Process_Knowledge/Lithography/Coaters# | |See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u> | ||
| | | | ||
|MIBK:IPA (1:3), IPA:H2O | |MIBK:IPA (1:3), IPA:H2O | ||
| Line 294: | Line 294: | ||
|Not approved. Low dose to clear, can be used for trilayer (PEC-free) resist-stack. Please contact [mailto:Lithography@danchip.dtu.dk Lithography] for information. | |Not approved. Low dose to clear, can be used for trilayer (PEC-free) resist-stack. Please contact [mailto:Lithography@danchip.dtu.dk Lithography] for information. | ||
|[[media:ZEP7000.pdf|ZEP7000.pdf]] | |[[media:ZEP7000.pdf|ZEP7000.pdf]] | ||
|[[Specific_Process_Knowledge/Lithography/Coaters# | |See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u> | ||
| | | | ||
|ZED-500/Hexyl Acetate,n-amyl acetate, oxylene. | |ZED-500/Hexyl Acetate,n-amyl acetate, oxylene. | ||