Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride: Difference between revisions

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Deposition of Aluminium Nitride

AlN can be deposited by using sputtering method with AlN target or reactive sputtering method with Al target in mixtures of argon and nitrogen. AlN film can be deposited by using the Cryofox PVD co-sputter/evaporation) or the Lesker Sputter System.

Al_xN_y in PVD co-sputter/evaporation

Only one method at the moment

	Cryofox PVD co-sputter/evaporation
Generel description	Reactive Sputtering (Al target) or AlN target sputtering
Stoichiometry	Depend on the targets power
Film Thickness	0nm - 200nm
Deposition rate	Not tested
Step coverage	Very good
Process Temperature	Up to 400^oC
Substrate size	100 mm wafers (Up to 12 wafers at a time) 150 mm wafers (Up to 4 wafers at a time)
Allowed materials	Silicon Silicon oxide, silicon nitride Quartz/fused silica Photoresist PMMA Mylar SU-8 Any metals

@@ Line 6: / Line 6: @@
 == Deposition of Aluminium Nitride ==
-AlN can be deposited by using sputtering method with AlN target or reactive sputtering method with Al target in mixtures of argon and nitrogen.
+AlN can be deposited by using sputtering method with AlN target or reactive sputtering method with Al target in mixtures of argon and nitrogen. AlN film can be deposited by using the [[Specific Process Knowledge/Thin film deposition/Multisource PVD|Cryofox PVD co-sputter/evaporation]])  or  the [[Specific Process Knowledge/Thin film deposition/Lesker|Lesker Sputter System]].
 *[[/AlN in PVD co-sputter|Al<sub>x</sub>N<sub>y</sub> in PVD co-sputter/evaporation]] <br/>