Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride: Difference between revisions

Revision as of 08:11, 8 October 2015

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AlN can be deposited by using sputtering method with AlN target or reactive sputtering method with Al target in mixtures of argon and nitrogen.

	Cryofox PVD co-sputter/evaporation
Generel description	Reactive Sputtering (Al target) or AlN target sputtering
Stoichiometry	Depend on the targets power
Film Thickness	0nm - 200nm
Deposition rate	Not tested
Step coverage	Very good
Process Temperature	Up to 400^oC
Substrate size	100 mm wafers (Up to 12 wafers at a time) 150 mm wafers (Up to 4 wafers at a time)
Allowed materials	Silicon Silicon oxide, silicon nitride Quartz/fused silica Photoresist PMMA Mylar SU-8 Any metals

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 == Deposition of Aluminium Nitride ==
-Write a short description of the process and how to perform the process.
+AlN can be deposited by using sputtering method with AlN target or reactive sputtering method with Al target in mixtures of argon and nitrogen.
 *[[/AlN in PVD co-sputter|Al<sub>x</sub>N<sub>y</sub> in PVD co-sputter/evaporation]] <br/>