Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace: Difference between revisions
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!style="background:silver; color:black" align="left"|Performance | !style="background:silver; color:black" align="left"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"| | |style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"| | ||
*Dry SiO<sub>2: 10Å to ~2000Å (takes too long to make it thicker) | *Dry SiO<sub>2</sub>: 10Å to ~2000Å (takes too long to make it thicker) | ||
*Wet SiO<sub> | *Wet SiO<sub>2</sub>: 10Å to ~5µm ((takes too long to make it thicker) | ||
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!style="background:silver; color:black" align="left"|Process parameter range | !style="background:silver; color:black" align="left"|Process parameter range | ||
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**with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) | **with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) | ||
*Quartz wafers (RCA cleaned) | *Quartz wafers (RCA cleaned) | ||
*From A2 furnace directly (e.g. incl. Predep HF) | |||
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